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发明名称
Method of simulating impact ionization phenomenon in semiconductor device
摘要
申请公布号
US6144929(A)
申请公布日期
2000.11.07
申请号
US19980137139
申请日期
1998.08.20
申请人
NEC CORPORATION
发明人
KUMASHIRO, SHIGETAKA
分类号
H01L21/66;G06F17/50;G06F19/00;G06Q50/00;G06Q50/04;H01L21/00;H01L29/00;(IPC1-7):G06F17/50
主分类号
H01L21/66
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