| 发明名称 |
Semiconductor device including an insulation film and electrode having nitrogen added thereto |
| 摘要 |
A semiconductor device comprising: a silicon substrate having a primary plane; an insulation film formed on the primary plane of the silicon substrate by subjecting the silicon substrate to thermal oxidation in an atmosphere of a gas of N2O or a mixing gas of N2O and O2; and an electrode formed on the insulation film and having nitrogen and a p-type dopant added therein.
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| 申请公布号 |
US6144094(A) |
申请公布日期 |
2000.11.07 |
| 申请号 |
US19970948043 |
申请日期 |
1997.10.09 |
| 申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
KOBAYASHI, KIYOTERU |
| 分类号 |
H01L21/28;H01L21/283;H01L21/316;H01L21/336;H01L29/51;H01L29/78;(IPC1-7):H01L23/58 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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