发明名称 |
Method of fabricating DRAM |
摘要 |
A method of fabricating DRAM and embedded DRAM. A contact pad is formed in the periphery/logic circuitry region simultaneously with the formation of the bit line in the memory region. A metal-insulator-metal (MIM) capacitor structure is formed in the memory region by damascene, and a contact and a contact pad are formed in the periphery/logic circuitry region. The formation of the contact in the periphery/logic circuitry is formed step by step to lower the difficulty to fabricate the deep contact. The capacitor electrodes are made by metal layers, which can increase the capacitance of the capacitor.
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申请公布号 |
US6143601(A) |
申请公布日期 |
2000.11.07 |
申请号 |
US19980208714 |
申请日期 |
1998.12.09 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
SUN, SHIH-WEI |
分类号 |
H01L21/02;H01L21/316;H01L21/768;H01L21/8242;H01L27/108;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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