| 摘要 |
There is provided an apparatus for carrying out dry etching, including (a) an etching chamber, (b) a pair of electrodes disposed in the etching chamber in facing relation, an object to be etched being placed on one of the electrodes, (c) a plate mounted on the other of the electrodes, the plate being formed with a plurality through-holes, and (d) a pair of enclosures each mounted on each of the electrodes and extending towards the opponent to define a spatial space therebetween in which plasma is generated by introducing a reactive gas thereinto through the through-holes. The enclosures are designed to have a gap therebetween. Both the plate and the enclosures are made of material other than aluminum. The reactive gas is composed only of CF4. Since nothing other than the object is exposed to plasma, it is possible to prevent generation of particles.
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