发明名称 COMPOSITION FOR FORMING FILM AND MATERIAL FOR FORMING INSULATION FILM
摘要 PROBLEM TO BE SOLVED: To obtain a composition capable of forming a coating film excellent in resistances to oxygen plasma and cracks and in dielectric properties by incorporating (A) a hydrolyzate of an alkoxy silane and (B) a hydrolyzate of a silane compound comprising an alkoxycyclosilane and a silane polymer and/or the condensates of ingredients A and B into the same. SOLUTION: This composition contains (A) a hydrolyzate of a compound of the formula: R1aSi(OR2)4-a and (B) a hydrolyzate of a silane compound comprising a compound of the formula and a polymer having repeating units of the formula: -Si(OR5)2-b(R6)bO- and/or the condensates of ingredients A and B. In the formulas, R1 to R6 are each a monovalent organic group; a is 0-2; b is 0-1; and n is 3-10, These hydrolyzates and/or condensates form a two-dimensional or three-dimensional structure, forming a high-mol.-wt. polyorganosiloxane. When applied to a substrate (e.g. a silicone wafer) and subjected to thermal polycondensation, the composition, containing the polyorganosiloxane, forms a glassy or macromolecular film excellent in adbesiveness.
申请公布号 JP2000309753(A) 申请公布日期 2000.11.07
申请号 JP19990118951 申请日期 1999.04.27
申请人 JSR CORP 发明人 NISHIKAWA MICHINORI;SUGITA HIKARI;YAMADA KINJI;GOTO KOHEI
分类号 H01L21/768;C09D183/02;C09D183/06;H01L21/312;(IPC1-7):C09D183/06 主分类号 H01L21/768
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