| 摘要 |
PROBLEM TO BE SOLVED: To remove a resist film formed on a surface of a metal pattern. SOLUTION: A discharge tube 33, hung from the top in a treatment chamber 31 of an ozone ashing device 30 performing a sub-ashing process, blows out an ashing gas containing ozone (O3) as main component like a shower outward in the diameter direction. A wafer 50 is held on a susceptor 37 provided at the bottom of the treatment chamber 31. A heater 38, provided concentrically outside the susceptor 37, heats only the outer periphery of the wafer 50. The susceptor 37 is rotated by a rotational shaft 39. The treatment chamber 31 is evacuated by an exhaust port 40. Since only the periphery of the wafer is heated, the ashing gas is supplied only to the periphery of the wafer, while oxidation of the surface of Cu wiring in the central portion and residues of the resist film in the periphery can be surely removed by ashing.
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