INSULATED GATE BIPOLAR TRANSISTOR AND METHOD FOR FABRICATING THEREOF

摘要

PURPOSE: An IGBT and a method for manufacturing the same are provided to be capable of increasing current density and improving a forward voltage drop characteristic by forming a hole collector of gates of trench structure and capturing holes without interfering the flow of carriers. CONSTITUTION: A hole collector(25) is formed on a drift layer(21) formed on a semiconductor substrate. Two gates(30) are spaced apart from each other about the hole collector(25), and the one sides and bottoms of the gates(30) are partially adjacent. A base area(23) is formed to be adjacent to one sides of the gates(30) which aren't adjacent to the hole collector(25). A low resistant layer(31) is formed on the base area(23). A source area(32) is formed to be adjacent to the gates, the base area and the low resistant layer. An anode area(26) is formed to be spaced apart from the base area.