Tantalum and tantalum-based films formed using fluorine-containing source precursors and methods of making the same

摘要

A method for chemical vapor deposition of a film comprising tantalum onto a substrate includes introducing into a deposition chamber: (i) a substrate; (ii) a source precursor in the vapor state; and (iii) a reactant gas, and maintaining the temperature of the substrate within the chamber as from about 70 DEG C. to about 675 DEG C. for a period of time sufficient to deposit a film comprising tantalum on the substrate. The source precursor has a formula (I):Ta(F5-q-p)(Xq-p)(Rp)(I)wherein X is selected from the group consisting of bromine, iodine, chlorine, and combinations thereof; q is an integer from 0 to 4; p is an integer from 0 to 4; and R is selected from the group consisting of hydrogen and lower alkyl.