摘要 |
A device and method for controlling a data storage device, wherein when executing a read cycle onto EDO-DRAM during EDO page mode, the row address strobe signal (RAS) is switched to High at the end of each read cycle. It therefore becomes possible to prevent data output conflicts between EDO-DRAM output data and ROM output data when a ROM read cycle is executed between DRAM read cycles. Accordingly, even when a SIMM configured with EDO-DRAM is used in a data storage device, it is possible to perform EDO mode reading operation for the SIMM, thereby enhancing operation speeds.
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