发明名称 |
Method of changing the power dissipation across an array of transistors |
摘要 |
A field effect transistor (30) has an array of transistors (31) made up of bonding pads (45-47) and sub-arrays of transistors (41-43). The bonding pads (45-47) are distributed between the sub-arrays of transistors (41-43) to reduce the maximum temperature that any portion of the FET (30) is exposed to while the FET (30) is in a conducting state. A similar effect can be appreciated by adjusting the threshold voltage or pinch-off resistance of the transistors in a portion (101) of an array of transistors (95).
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申请公布号 |
US6140184(A) |
申请公布日期 |
2000.10.31 |
申请号 |
US19980088027 |
申请日期 |
1998.06.01 |
申请人 |
MOTOROLA, INC. |
发明人 |
DUPUY, PHILLIPE;MERCHANT, STEVEN L.;BAIRD, ROBERT W. |
分类号 |
H01L27/02;(IPC1-7):H01L21/823;H01L21/336;H01L29/76;H01L29/94;H01L31/062 |
主分类号 |
H01L27/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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