METHOD FOR FORMING CHARGE STORAGE ELECTRODE IN SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a charge storage electrode is to manufacture a high integration semiconductor memory device having the sufficient capacitance and to improve the manufacturing yield. CONSTITUTION: A method for forming a charge storage electrode comprises the steps of: forming an insulation layer(3) on a silicon substrate(1) having a junction part(2), patterning the insulation layer for exposing the junction part to form a contact hole and forming a silicon layer(4) on the whole upper surface bury the contact hole; forming an oxide layer(5) on the silicon layer and then sequentially patterning the oxide layer and the silicon layer using a mask for charge storage electrode; forming a silicon spacer(6) on the side walls of the patterned silicon layer and the oxide layer and removing the oxide layer; and removing a natural oxide thus grown on the surface and then forming and annealing a silicon seed on the surface of the silicon layer and the silicon spacer to form a hemispherical polysilicon(7) on the surface of the silicon layer and the silicon spacer.