发明名称 Method for removing photoresist in metallization process
摘要 A method for removing photoresist in a metallization process according to the invention is able to completely remove a photoresist residue remaining on the surface of a metal layer and avoids corrosion of the metal layer. In the method, a heat treatment is performed after patterning the metal layer and before removing the photoresist layer, thereby removing materials which corrode the metal layer. Therefore, corrosion to the metal layer is prevented. Next, the photoresist layer is removed by a wet strip process instead of an oxygen plasma process. As a result, the photoresist residue remaining on the surface of the metal layer cannot be oxidized into an insoluble oxide and can be completely removed.
申请公布号 US6136515(A) 申请公布日期 2000.10.24
申请号 US19980136629 申请日期 1998.08.19
申请人 UNITED INTEGRATED CIRCUITS CORP. 发明人 CHEN, HUI-MING
分类号 G03F7/42;(IPC1-7):G03F7/40 主分类号 G03F7/42
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