发明名称 |
Substrate processing chamber with tunable impedance |
摘要 |
A substrate processing system that includes a deposition chamber having a reaction zone, a plasma power source for forming a plasma within the reaction zone and an impedance tuner electrically coupled to the deposition chamber. When initially formed, the plasma has a first impedance level that can be adjusted by the impedance tuner to a second impedance level. In a preferred embodiment, the impedance tuner is a variable capacitor.
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申请公布号 |
US6136388(A) |
申请公布日期 |
2000.10.24 |
申请号 |
US19970982121 |
申请日期 |
1997.12.01 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
RAOUX, SEBASTIEN;MUDHOLKAR, MANDAR;TAYLOR, WILLIAM N. |
分类号 |
H05H1/46;C23C16/34;C23C16/44;C23C16/455;C23C16/50;C23C16/505;C23C16/52;H01J37/32;H01L21/31;(IPC1-7):H05H1/24 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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