发明名称 Substrate processing chamber with tunable impedance
摘要 A substrate processing system that includes a deposition chamber having a reaction zone, a plasma power source for forming a plasma within the reaction zone and an impedance tuner electrically coupled to the deposition chamber. When initially formed, the plasma has a first impedance level that can be adjusted by the impedance tuner to a second impedance level. In a preferred embodiment, the impedance tuner is a variable capacitor.
申请公布号 US6136388(A) 申请公布日期 2000.10.24
申请号 US19970982121 申请日期 1997.12.01
申请人 APPLIED MATERIALS, INC. 发明人 RAOUX, SEBASTIEN;MUDHOLKAR, MANDAR;TAYLOR, WILLIAM N.
分类号 H05H1/46;C23C16/34;C23C16/44;C23C16/455;C23C16/50;C23C16/505;C23C16/52;H01J37/32;H01L21/31;(IPC1-7):H05H1/24 主分类号 H05H1/46
代理机构 代理人
主权项
地址
您可能感兴趣的专利