| 摘要 |
PROBLEM TO BE SOLVED: To provide a bipolar transistor which can operate at high speed with satisfactory yield and at a low cost. SOLUTION: In this method, a semiconductor device, which comprises an integrated circuit having a bipolar transistor, is manufactured using SST(super self-aligned process technology) technique. In this case, by optimizing the grown thickness of a polysilicon film 9 which is later to be formed as a P+type base electrode polysilicon film 10, the operational speed of the bipolar transistor can be improved and simultaneously its namufacturing yield can be improved to reduce its cost.
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