| 摘要 |
PROBLEM TO BE SOLVED: To attain stable contact between an upper layer wiring and lower layer wiring by filling the via contact holes formed with the selective manner on an interlayer insulation film with via contact plugs to electrically connect the first to third metal films. SOLUTION: After the lower layer wiring 3 formed of a first metal film and a high melting point metal film 4 formed on the upper surface of this lower layer wiring 3 as the second metal film are covered with the photoetching of the thin film of the four-layer structure, a spacer 5 is left at the side surface of the lower layer wiring 3 and high melting point metal film 4 and the first insulation film 2 is exposed. After an interlayer insulation film 6 is formed, the via contact holes 9 are formed to the interlayer insulation film 6 to expose a part of the spacer 5. The contact holes 9 are filled with the via contact plugs 7 to form an upper layer wiring 8 as the third metal film and these first to third metal films 3, 4, 8 are electrically connected.
|
