| 摘要 |
PROBLEM TO BE SOLVED: To obtain a nitride semiconductor device, a photodetector and a flame sensor, each having a semiconductor element structure wherein a good Ohmic contact electrodes can be formed on a p-AlxGa1-xN layer. SOLUTION: The device has a p-type semiconductor layer 1 composed of a p-AlxGa1-xN layer (x>0), the semiconductor layer 1 has a high impurity concentration layer 7 contg. at least Be as an impurity formed in a portion near its surface, the impurity concentration is higher than that in a lower layer near the surface portion, and metal electrodes 8 are formed on the surface of the high impurity concentration layer 7. The impurity concentration of this layer 7 is preferably over 1018 cm-3.
|
