INTEGRATED CIRCUIT STRUCTURE WITH CHARGE INJECTION BARRIER

摘要

PROBLEM TO BE SOLVED: To reduce low frequency vibration by blocking carrier injected to a substrate wafer by arranging a barrier between a conductive element incorporated in an active element layer deposited in a surface of a substrate wafer and a substrate wafer. SOLUTION: A p-n junction 12 formed of a wide gap material is arranged in an interface 14 between an epitaxial layer 25 and a substrate wafer 21. The p-n junction 12 functions as a barrier and reduces carrier 15 injected into the substrate wafer 21 from a contact pad 19 or a similar conductive element. Since enough charge for forming or maintaining a high field area between the contact pad 19 and a contact pad 23 is eliminated by reducing the carrier 15 injected from the contact pad 19 into the substrate wafer 21 in this way, low frequency vibration is reduced or eliminated.