发明名称 |
Anti-reflection oxynitride film for tungsten-silicide substrates |
摘要 |
The present invention provides an anti-reflection film for lithographic application on tungsten-silicide containing substrate. In one embodiment of the present invention, a structure for improving lithography patterning in integrated circuit comprises a tungsten-silicide layer, a diaphanous layer located above the tungsten-silicide layer, an anti-reflection layer located above the diaphanous layer, and a photoresist layer located above the anti-reflection layer for patterning the integrated circuit pattern.
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申请公布号 |
US6133613(A) |
申请公布日期 |
2000.10.17 |
申请号 |
US19980018100 |
申请日期 |
1998.02.03 |
申请人 |
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
YAO, LIANG-GI;LIN, JOHN CHIN-HSIANG;LIN, HUA-TAI |
分类号 |
H01L21/027;H01L21/3213;(IPC1-7):H01L23/58 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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