| 摘要 |
PURPOSE: A method for manufacturing a high voltage semiconductor device is provided to prevent a characteristic from being deteriorated by a high voltage applied to a drain, by minimizing a field oxidation layer formed on a boundary region between a gate and a drain. CONSTITUTION: A method for manufacturing a high voltage semiconductor device comprises the steps of: injecting an impurity ion of a first conductivity type into a semiconductor substrate(11), and performing a thermal treatment to form a well(12); injecting an impurity ion of a second conductivity type into a part of the well to form a drift region(13) while forming a first field oxidation layer(14) on an isolation region to inject an impurity ion for controlling a threshold voltage into a channel region; injecting a fluoric ion into a boundary region on the well region and drift region , and performing an oxidation process to form a second field oxidation layer; forming a stacked gate of a gate oxidation layer and a polysilicon(17) overlapped with a part of the well region and second field oxidation layer; and injecting a high density impurity ion of a second conductivity type into a part of the well region and drift region between the first field oxidation layer and the gate, to form a source(18) and a drain(19).
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