| 摘要 |
PURPOSE: A method for forming a conductive interconnect of a semiconductor device is provided to improve the characteristics and the reliability of the device and accordingly to enable a large integration of the device by forming a contact hole having an elevated source/drain structure with an epitaxy-growth method. CONSTITUTION: A bottom insulation layer is formed on a semiconductor substrate, and a contact hole is formed by an etching process using a metal interconnect contact mask. And, an amorphous silicon film is formed on the whole surface. The a-Si film is formed by an LPCVD method using SiH4(MS) or Si2H6(DCS). And, an impurity of silicon ion is injected into the a-Si film by an in-situ process while forming the a-Si film. Then, the a-Si film is crystallized by a thermal annealing process. The a-Si film connected with the substrate forms an epitaxially-grown silicon film(5) after the thermal annealing, and the a-Si film not connected with the substrate forms a silicon film(6) where a crystalline and an amorphous silicon are mixed. Then, the silicon film except the epitaxially-grown silicon film is removed by a wet etching process using HNO3 and CH3CHHO and HF solution. The epitaxially-grown silicon film mitigates a step during a contact process of the metal interconnect because a source/drain junction region has an elevated structure.
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