发明名称 COATING LAYER FORMING METHOD OF SHIELD AND SPUTTERING APPARATUS UTILIZING THE SHIELD AND THIN LAYER FORMING METHOD UTILIZING THE SPUTTERING APPARATUS
摘要 PURPOSE: A method for forming a coating film of a shield and a sputtering apparatus using the shield and a method for forming a thin film using the sputtering apparatus are provided to prevent the inside of a vacuum chamber from being contaminated by foreign substances by increasing an absorption efficiency of a material with a low absorption coefficient. CONSTITUTION: The sputtering apparatus includes a vacuum chamber(21), a table(23) which is installed in the vacuum chamber and where a target(22) and a substrate(100) to deposit are installed, and a shield(30) surrounding a deposition space between the target and the substrate. The vacuum chamber is connected to a vacuum pump to maintain a high vacuum. The shield includes a body(32) where a flange part(31) are formed on its upper and lower part and a plurality of shield plate parts(33) installed on an inner circumference of the body. The body of the shield and the flange part is fabricated with an aluminum, stainless steel, molibdenium and a stainless coated with aluminum. And, a coating film(40) is formed on a surface of the body by applying a potential voltage, and the coating film is an oxide or a nitride film. A heater(50) is installed to heat the inner and outer circumference of the shield body and comprises a control unit to control a temperature.
申请公布号 KR100267886(B1) 申请公布日期 2000.10.16
申请号 KR19970025389 申请日期 1997.06.18
申请人 INTEGRATED PROCESS SYSTEMS 发明人 LEE, CHANG KEUN;YOON, NEUNG GOO;LEE, EUN HEE
分类号 H01L21/203;(IPC1-7):H01L21/203 主分类号 H01L21/203
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