DEVICE HAVING MULTI-LAYER STRUCTURE, PRODUCTION DEVICE FOR THE DEVICE, AND PRODUCTION METHOD FOR THE DEVICE

摘要

Two targets to be achieved during a thin-film transistor production, namely, keeping a cleanliness of an interface of an amorphous semiconductor thin film to be laminated on a substrate, and crystallizing with a high reliability an amorphous semiconductor thin film which is likely to vary in thickness between substrates. An amorphous semiconductor thin film is formed on a substrate in a clean atmosphere, physical property values relating to the crystallization of the formed thin film are measured, laser beams having features based on the measured physical property values are applied to the thin film for melt-recrystallizing, and, at the same time, substrates are carried or mounted with a clean atmosphere maintained between devices and rooms for the substrates.