| 摘要 |
PROBLEM TO BE SOLVED: To incorporate boron into a carbon nanotube by effecting the chemical reaction of a carbon nanotube with boron oxide at high temp. SOLUTION: B2O3 (B) is put on the bottom of a graphite crucible 6 in a high-frequency induction heating furnace 1, and carbon nanotubes (C) are stacked in layers thereon. The graphite crucible 6 is housed in a cylindrical graphite heat generator 4. While an inert gas such as Ar gas is introduced through an N2 inlet 8 to flow in the graphite heat generator 4, the crucible is heated by a work coil 5, for example at 1,000 deg.C for 4 hours, and then naturally cooled. Thus, the carbon nanotube (C) expressed by the formula of BxC1-x (x<0.1) containing partially dissolved boron in the carbon nanotube (C) is obtd. and the obtd. material is useful for a semiconductor material, or the like. As for B2O3 (B), boric acid, boron oxide or substances which produce B2O3 (B) at high temp. are preferably used, and the reaction temp. is preferably 800 to 1,600 deg.C. The crucible is preferably the graphite crucible having reducing property or a BN crucible having excellent corrosion resistance.
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