| 摘要 |
PROBLEM TO BE SOLVED: To form a thick TiN film near the bottom part and side wall part of a connection hole with improved film-forming characteristics of the TiN film, by controlling the flow rate of titanium halogenide based on the aspect ratio of the connection hole when a titanium nitride is formed in the connection hole by a chemical vapor growth method. SOLUTION: A TiN is film-formed wherein the bottom part of a connection hole is thicker than a wafer surface, with the aspect ratio of the connection hole up to 4.5, if the TiN film is formed in the connection hole under the following condition: material gas is TiCl4/NH3(N2) =20/400/50 sccm, pressure is 40 Pa, and substrate temperature is 590 deg.C. This increases the barrier effect at CVD-W film-formation, as well as increase in embedding margin of W as the form of connection hole at CVD-W film-formation approaches a forward taper side. Since the CVD method uses surface reaction for film-formation of TiN film, a sufficient TiN film is formed at the side wall part of the connection hole, preventing degradation in film-formation characteristics at the side wall of CVD-W.
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