Semiconductor memory, especially with a ferroelectric capacitor, has a barrier metal covered at its side by an oxygen penetration preventing film and at its top by a lower capacitor electrode

摘要

A semiconductor memory has a barrier metal (8a) covered at its side surface by an oxygen penetration preventing film (9) and at its top surface by a lower capacitor electrode (10a). A semiconductor memory has a lower electrode (10a) of a capacitor electrically connected to a source/drain region (5) of a MOS transistor via a contact plug (6) and an overlying barrier metal (8a), the entire side surface of the barrier metal (8a) being covered by an oxygen penetration preventing film (9) and the entire top surface of the barrier metal (8a) being covered by the lower capacitor electrode (10a). An Independent claim is also included for production of the above semiconductor memory.