| 摘要 |
PURPOSE: A fuse array of a semiconductor device and forming method thereof is to minimize the area of the fuse array and allow the fuse to be operated electrically, thereby preventing the degeneration of the semiconductor device. CONSTITUTION: A fuse array of a semiconductor device comprises: a first interconnection connected to a signal input; a second interconnection connected to a signal output; and a transistor(51) having a gate insulator made of a ferroelectric, placed between the first interconnection and the second interconnection and for electrically switching the first and second interconnections. A forming method of a fuse array comprises the steps of: forming an insulating layer on a semiconductor substrate having a MOS(Metal oxide semiconductor) transistor(51) having source, drain and gate made of ferroelectric; forming first to third contact hole to expose a selected portion of the source, drain and gate; forming first to third plug to fill the first to third contact holes; and forming first to third interconnections connected to the first to third plugs.
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