发明名称 |
Method of improving the etch resistance of photoresists |
摘要 |
<p>A photoresist system is provided that is easily structurable and is suitable for deep ultraviolet range patterning. An increased etching resistance to oxygen-containing plasma is produced in a lithographically generated photoresist structure by treatment with an etch protectant. The etch protectant includes a silylating agent for chemical reaction with reactive groups of the photoresist. In an embodiment, the photoresist includes a base resin initially containing no aromatic groups. Silylating agents include silicon tetrachloride, silicon tetrafluoride, trichlorosilane, dimethylchlorosilane and hexamethyldisilazane. <IMAGE></p> |
申请公布号 |
EP1041445(A2) |
申请公布日期 |
2000.10.04 |
申请号 |
EP20000104735 |
申请日期 |
2000.03.04 |
申请人 |
INFINEON TECHNOLOGIES NORTH AMERICA CORP. |
发明人 |
SCHROEDER, UWE PAUL;KUNKEL, GERHARD;GUTMANN, ALOIS;SPULER, BRUNO |
分类号 |
G03F7/038;G03F7/075;G03F7/039;G03F7/40;H01L21/027;(IPC1-7):G03F7/40 |
主分类号 |
G03F7/038 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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