发明名称 |
Subfield conductive layer and method of manufacture |
摘要 |
A subfield conductive layer is provided, wherein a conductive layer is implanted beneath and laterally adjacent a field dielectric. The subfield conductive layer is placed within the silicon substrate after the field dielectric is formed. The conductive layer represents a buried interconnect which resides between isolated devices. The buried interconnect, however, is formed using high energy ion implant through a field dielectric formed either by LOCOS or shallow trench isolation techniques. The buried interconnect, or conductive layer, resides and electrically connects source and drain regions of two isolated devices.
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申请公布号 |
US6127719(A) |
申请公布日期 |
2000.10.03 |
申请号 |
US19980038464 |
申请日期 |
1998.03.11 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
FULFORD, JR., H. JIM;DAWSON, ROBERT;HAUSE, FRED N.;BANDYOPADHYAY, BASAB;MICHAEL, MARK W.;BRENNAN, WILLIAM S. |
分类号 |
H01L21/74;(IPC1-7):H01L29/00;H01L31/119 |
主分类号 |
H01L21/74 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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