| 摘要 |
PROBLEM TO BE SOLVED: To enable the exhibition of a high gettering ability without requiring a complicated process. SOLUTION: This silicon single crystal suitable for epitaxial wafers is grown, while doped with nitrogen in an amount of >=1×1012 atoms/cm3 and with carbon in an amount of 0.1 to 5×1016 atoms/cm3 or/and boron in an amount of 1∼1017 atoms/cm3. The epitaxial wafer is obtained by growing an epitaxial layer on the surface of a silicon wafer cut out from a silicon single crystal. When the epitaxial wafer is produced by subjecting the silicon wafer to the treatment of the epitaxial layer growth and then applying a device process using a temperature of >=1,100 deg.C to the wafer, the concentration of oxygen is preferably controlled to >=12×1017 atoms/cm3. It is further preferable to cut out a silicon wafer from a silicon single crystal doped with nitrogen, thermally treat the wafer at >=1,000 deg.C and generate defects in an amount of 1×104 defects/cm2 on the cross section of the wafer. When a thermal treatment at >=1,000 deg.C is applied to the wafer before the epitaxial growth, the wafer generating the defects in an amount of >=5×104 defects/cm2 is preferably used. |
