| 摘要 |
This invention relates to a nonvolatile ferroelectric memory device which includes main cell array arranged in columns of even number, reference cell array arranged in two columns, a plurality of cell array blocks in which a plurality of pairs which consist of said main cell array and said reference cell array are arranged, SWL word line driver arranged along said column in parallel, and control block connected between both ends of said columns in order to control other cell array block neighboring with said cell array blocks.
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