METHOD OF FORMING BARRIER IN SEMICONDUCTOR DEVICE

摘要

PURPOSE: A barrier metal formation method is provided to improve an operating speed and a yield by reducing a contact resistance between a metal film and a junction region using a barrier metal film having a titanium and a tungsten nitride. CONSTITUTION: After forming an insulating layer(3) on a semiconductor substrate(1) having a junction region(2), a contact hole is formed by selectively etching the insulating layer(3) to expose the junction region(2). A titanium film(4A) and a tungsten nitride(WNx) film(4B) are sequentially deposited on the resultant structure. The resultant structure is then annealed at the temperature of 400-0500 °C and under the atmosphere of H2 and O2. The WNx film(4B) is deposited by PECVD(plasma enhanced CVD) using mixed gases of WF6, NH3 and H2.