发明名称 ION IMPLANTER
摘要 PROBLEM TO BE SOLVED: To provide an ion implanter of a long life, high reliability at low cost, capable of conducting uniform ion implantation to a substrate in a three- dimensional shape. SOLUTION: This ion implantater implants ions into a substrate 10 by applying a voltage on the substrate 10 placed in a vacuum container 1 and by generating a discharge plasma in the vacuum container 1. The vacuum container 1 is evacuated to be vacuum inside thereof and supplied with a gas of a substance to be ion-implanted. The ion implanter comprises a step-up transformer 42 and a switching element 40 connected to the primary side of the step-up transformer 42.
申请公布号 JP2000268769(A) 申请公布日期 2000.09.29
申请号 JP19990068196 申请日期 1999.03.15
申请人 TOSHIBA CORP 发明人 NODA ETSUO;ASANO SHIRO;SUGAWARA TORU
分类号 H01J37/317;C23C14/48;(IPC1-7):H01J37/317 主分类号 H01J37/317
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