| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device of a structure, wherein a stress to a silicon layer, which is generated by a change in the capacities of element isolation regions, is relaxed and a crystal defect is hardly generated in the silicon layer, and a manufacturing method of the device. SOLUTION: A semiconductor device is provided with an SOI substrate with an insulating layer formed thereon and a silicon layer formed on the layer 2, a semiconductor element part 3 formed within this silicon layer and element isolation-parts 4 and 5. The parts 4 and 5 consist of a trench-shaped insulator 5 formed adjacent to the part 3, this insulator 5 is adjacent to the part 3 and has a site of a width continuously reducing in the lower direction, and, at the same time, the surface of the insulator 5 is flattend in the vicinity of the above semiconductor element part.
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