发明名称 |
Semiconductor photodetector with an increased photo receiving area and exhibiting high speed performances |
摘要 |
The present invention provides a compound semiconductor multilayer structure comprising : a plurality of core layers absorbing a light and exhibiting a photoelectric transfer ; and a plurality of cladding layers, adjacent two of which sandwich each of the core layers so that the core layers are separated from each other by the cladding layers. <IMAGE> |
申请公布号 |
EP0966046(B1) |
申请公布日期 |
2007.03.07 |
申请号 |
EP19990111600 |
申请日期 |
1999.06.15 |
申请人 |
NEC ELECTRONICS CORPORATION |
发明人 |
KUSAKABE, ATSUHIKO |
分类号 |
H01L31/0232;H01L31/10;H01L31/0352 |
主分类号 |
H01L31/0232 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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