| 摘要 |
PROBLEM TO BE SOLVED: To reduce a possession area by making common an original zap to a plurality of mating zaps by a method wherein a predetermined reverse directional voltage is applied on between a first conductive region as the original zap and any second conductive region, and a space between both the regions is broken down to become in a conductive state. SOLUTION: This Zener zap diode is formed so that a mating zap is bidirectional, and, for example, an N-type region 2 formed rectangularly in an N well region 1 formed in a semiconductor substrate is an original zap, and each P-type region 3 formed in the opposite N well region 1 intervening the original zap adjacent to the original zap is a mating zap. With such structure, when a desirable resistor is selected, and is connected to the original zap, a reverse directional brake voltage is applied on between the N type region 2 of the original zap and the P type region 3 of the mating zap, and a space between both the regions is broken down to become in a conductive state, and the resistor connected to the one mating zap is connected to the original zap.
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