| 摘要 |
<p>PROBLEM TO BE SOLVED: To easily detect damages which causes application of stress inside, with high accuracy, by forming P-type semiconductor regions and N-type semi conductor regions in one plane in a semiconductor substrate so that these regions are joined to each other to form in these regions, so that P-N junctions are applied with a prescribed reverse bias voltage. SOLUTION: In each pad disposing region 13, a plurality of connection pads 131 and a pair of pads 132 for applying bias voltage are formed. In the part of a semiconductor substrate 20 immediately underneath each pad 131, especially under the central part of each pad 131, junctions of P-type semiconductor regions and N-type semiconductor regions are formed in planar way in the plane of the substrate. When a reverse voltage is applied to the P-N junctions to increase the level, the impurity density is set at such a value that the P-N junctions are completely depleted before the intrinsic breakdown is generated. When the substrate 20 is damaged, the soft breakdown is generated with application of the reverse bias to the P-N junctions. The leakage current caused by the gentle breakdown is produced and flows to the pads 132 and can therefore be detected.</p> |
