发明名称 Method for manufacturing cylindrical lower electrode of DRAM capacitor
摘要 A method for forming the cylindrical lower electrode of a capacitor includes the steps of providing a semiconductor substrate, and then forming an insulation layer over the substrate. Next, a contact opening is formed in the insulation layer, and then a conductive layer is formed, filling the contact opening and covering the insulation layer. Subsequently, a patterned photoresist layer is formed over the conductive layer. Thereafter, silylated photoresist spacers are formed on the sidewalls of the photoresist layer. Finally, using the spacers as a mask, the photoresist layer and a portion of the conductive layer are etched away to form the cylindrical-shaped lower electrode of a capacitor.
申请公布号 US6124162(A) 申请公布日期 2000.09.26
申请号 US19980207171 申请日期 1998.12.07
申请人 UNITED MICROELECTRONICS CORP. 发明人 LIN, BENJAMIN SZU-MIN
分类号 H01L21/02;H01L21/8242;(IPC1-7):H01L21/823 主分类号 H01L21/02
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