发明名称 VACUUM DEPOSITION DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a vacuum deposition device in which the capacity (space) of a chamber can be reduced, furthermore, the plane dispersion of the incident angle of a vapor deposition beam on a member to be vapor deposited such as a wafer is reduced, and the cross-sectional shape of a vapor deposition film such as a pattern can be uniformized. SOLUTION: A vacuum deposition device 1A is constituted in such a manner that a space between a vapor depositing source 2 and a wafer W as a member to be vapor-deposited is provided with a shielding board 3 in which an opening 4 in which a part of the vapor depositing face in the wafer W is exposed viewed from the vapor depositing source 2, and, while the wafer W is rotated with the center point as an axis, a vapor deposition film is formed. The opening 4 preferably has a fan shape in which a pivot corresponds to the center point of the wafer W, and, furthermore, a point at which the normal of a vapor deposition beam B is made incident on the wafer W from the vapor depositing source 2 preferably lies on the center in the opening 4 or in the vicinity thereof.
申请公布号 JP2000265261(A) 申请公布日期 2000.09.26
申请号 JP19990073312 申请日期 1999.03.18
申请人 SONY CORP 发明人 KOBAYASHI JUNICHIRO
分类号 G11B5/85;C23C14/24;C23C14/50;H01L21/285;(IPC1-7):C23C14/24 主分类号 G11B5/85
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