Integrated circuit with memory comprising an internal circuit for the generation of a programming high voltage

摘要

In a memory integrated circuit comprising an internal circuit for the generation of a programming high voltage and comprising a first pad designed to receive a main logic supply voltage below five volts, a second specific supply pad is designed to supply the high voltage generation circuit. This enables the application of a specific logic supply voltage with a voltage level greater than that of the main logic supply voltage in test mode or in application mode.