| 摘要 |
A word line controller selects a word line in a memory cell array and applies a voltage necessary for a read, write, or erase to the selected word line. The memory cell array, a bit line controller, a column decoder, a data I/O buffer, the word line controller, and a data detector are controlled by a control signal/control voltage generator. The control signal/control voltage generator includes a read/verify voltage generator. The voltage of the selected word line (WL) upon a read or write verify that is generated by the control signal/control voltage generator is adjusted in accordance with the common source line voltage of the memory cell array.
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