SEMICONDUCTOR DEVICE HAVING THIN FILM TRANSISTOR AND FABRICATION METHOD THEREOF

摘要

PURPOSE: A semiconductor device such as an active matrix liquid crystal display(AM-LCD) having a thin film transistor(TFT) and a method for fabricating the device are provided to ensure a larger capacity in a smaller space. CONSTITUTION: A semiconductor device includes a driving circuitry region and a pixel region formed on a single substrate(101). The pixel region includes a pixel TFT and a storage capacitor each having a light shielding layer(102) and a lower electrode(103) formed on the substrate(101). The shielding layer(102) is then covered with a first insulating layer(104), but the electrode(103) is exposed through the insulating layer(104). The insulating layer(104) and the electrode(103) are then covered with a second insulating layer(105). Subsequently, required active parts such as a source(114) and a drain(115) of the pixel TFT are formed on the second insulating layer(105), and an upper electrode(118) extended from the drain(115) is also formed for the storage capacitor. In particular, the second insulating layer(105) between the lower and upper electrodes(103,118) acts as a dielectric layer of the storage capacitor.