METHOD FOR MANUFACTURING DUAL METAL GATE STRUCTURE OR COMPLEMENTARY METAL OXIDE SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a dual metal gate structure provides a dual metal gate structure having different work functions regarding a p-channel metal oxide semiconductor and an n-channel metal oxide semiconductor, the conductivity of the dual metal gate structure being not associated with a width of a gate. CONSTITUTION: A method for manufacturing a first transistor with a first gate electrode and a second transistor with a second gate electrode, on a semiconductor substrate, comprises the steps of: having a first conductive material deposited and insulated on a first portion of the semiconductor substrate, the first conductive material having a first work function; and having a second conductive material deposited and insulated on a second portion of the semiconductor substrate, the second conductive material having a second work function different from the first work function. The first conductive material is used to form the first gate electrode and the second conductive material is used to form the second gate electrode.