| 摘要 |
PROBLEM TO BE SOLVED: To enable operation at a high-voltage, without increasing the thickness of a silicon substrate. SOLUTION: A periphery, excluding the surface provided with a gate electrode 74, an emitter electrode 75a, and a collector electrode 76a formed on the surface of a substrate, is covered with thin-film diodes (69a, 63, 68a), and a cathode of the diode is connected with the emitter electrode 75a, and an anode thereof is connected with the collector electrode 76a. The elements covering the diodes are formed on the upper side of a buried insulating layer provided in the intermediate part of the substrate.
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