| 摘要 |
<p>A method and/or device (285) for determining first and second band offsets (100, 110) at a semiconductor/dielectric heterointerface (115), which includes the semiconductor/dielectric heterointerface (115) exposed to incident photons (205) from a light source (200); a detector (275, 280) for generating a signal by detecting emitted photons (260, 265) from the semiconductor/dielectric heterointerface (115); and an element (310) for changing the energy of incident photons (205) to monitor the first and second band offsets (100, 110).</p> |
