| 摘要 |
<p>A method for producing a silicon single crystal comprising growing the single crystal(6) through pulling up the crystal from a silicon melt (3) in a quartz crucible (4) while applying a horizontal magnetic field (10), characterized in that crystal growth is carried out in a manner such that either of a higher temperature portion and a lower temperature portion which are formed on the surface of the silicon melt (3) in the quartz crucible (4) is positioned at a solid-liquid interface observed during the crystal growth or in a manner such that a magnetic field at a crystallization center on the surface of the silicon melt (3) in the quartz crucible (4) has a strength wherein the ratio of its perpendicular component(12) to its horizontal component (11) is 0.3 to 0.5. The method can be used for producing a silicon single crystal rod having a highly uniform concentration distribution for interstitial oxygen atoms in the direction of crystal growth with high productivity and in good yield in the horizontal magnetic field-applied CZ method.</p> |
