发明名称 |
Method for forming low compressive stress fluorinated ozone/TEOS oxide film |
摘要 |
A method and apparatus for forming a halogen-doped silicon oxide film, preferably a fluorinated silicon glass (FSG) film, having compressive stress less than about -5x108 dynes/cm2. In a specific embodiment, the FSG film is formed by a sub-atmospheric CVD thermal process at a pressure of between about 60-650 torr. The relatively thin film, besides having a low dielectric constant and good gap fill capability, has low compressive stress, and is particularly suitable for use as an intermetal (IMD) layer.
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申请公布号 |
US6121164(A) |
申请公布日期 |
2000.09.19 |
申请号 |
US19970957058 |
申请日期 |
1997.10.24 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
YIEH, ELLIE;ZHANG, XIN;NGUYEN, BANG;ROBLES, STUARDO;LEE, PETER |
分类号 |
C23C16/40;H01L21/316;(IPC1-7):H01L21/31;H01L21/469 |
主分类号 |
C23C16/40 |
代理机构 |
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