| 摘要 |
PURPOSE: A gallium-nitride light emitting diode(LED) is provided to increase a light emitting efficiency by preventing the light generated inside from being reflected again. CONSTITUTION: A gallium-nitride light emitting diode(LED)(10) comprises a substrate(11), a semiconductor layer, a first electrode layer(17), a second electrode layer(15), and a reflection blocking layer(18). The semiconductor layer is formed on the substrate and has a stacked structure composed of an n-type clad layer(12) and a p-type clad layer(14). The first electrode layer is formed to be contacted with the n-type clad layer. The second electrode layer is formed on the p-type clad layer. The reflection-blocking layer protects the second electrode layer and has a thickness to control a reflection regarding a wavelength of a light obtained from the semiconductor layer as a light-penetrating insulating material. The thickness of the reflection blocking layer is determined by the wavelength divided by a multiplication of refractivity of the reflection-blocking layer by four. |
