| 摘要 |
<p>The invention concerns an optoelectronic system comprising at least three sections (A, B, C) corresponding to specific respective functions and having different forbidden band energy levels respectively. The invention is characterised in that said three sections consist of at least two layers (20, 30) superposed by epitaxy, the upper layer (30) being etched to define said sections in the form of two separated end sections (A, C) delimited in the upper layer (30) on either side of an intermediate section (B) defined in the lower layer (20), and to enable a coupling between the intermediate section (B) and each of the end sections (A, C) enclosing it, by evanescent field coupling, the energy level of the forbidden bands of at least one of the sections defined in the upper layer (30) being controlled by carrier injection.</p> |
