| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a copper or copper alloy wiring which is excellent in electromigration durability, and a manufacturing method of the device. SOLUTION: This manufacturing method is provided with a process for depositing a silicon oxide film 13 on a silicon substrate 10, a process for forming a resist pattern 14 on the silicon oxide film 13, a process wherein the silicon oxide film 13 is etched by using the resist pattern 14 as a mask and a trench 15 turning to a wiring is formed, a process for depositing a copper film 17 in order to bury copper turning to a wiring in the trench 15, a CMP(chemical mechanical polishing) process wherein excessive copper in the copper film 17 except a region of the trench 15 is eliminated, flatening is performed and a copper wiring 18 is formed, and a process wherein the copper wiring 18 which is exposed after CMP is doped with boron.
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