| 摘要 |
PROBLEM TO BE SOLVED: To improve characteristics in an integrated circuit having mixed transistors, including Dynamic Vth MOS(DV-MOS), with different operation modes. SOLUTION: A semiconductor device is composed of a plurality of insulated gate field-effect transistors that include semiconductor active layers 5 and 6 formed in an insulating layer 3 on a substrate 2, rear-face gate electrodes 8 and 9 located opposite on a side face of the substrate 2 with a rear-face gate insulating film 7 in between, and a front-face gate electrode 11 on an opposite side to the semiconductor active layers 5 and 6 with an front-face gate insulating film 10 in between. The insulated gate field-effect transistors include a first insulated gate field-effect transistor (CON-MOS) in which the rear-face gate electrode 8 and the front-face gate electrode 11 are separated in an insulated state, and a second insulated gate field-effect transistor (DV-MOS) in which the rear-face gate electrode 9 and the front-face gate electrode 11 are joined electrically. In this case, the rear-face insulating film 7b of the DV-MOS is made thinner than the rear-face gate insulating film 7a of the CON-MOS.
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